Semiconductor structure enhanced for high voltage applications
A semiconductor structure enhanced for high-voltage applications is disclosed. The structure comprises a protruding wall structure, formed by etching a substrate, that extends from a base surface of the substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electric...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor structure enhanced for high-voltage applications is disclosed. The structure comprises a protruding wall structure, formed by etching a substrate, that extends from a base surface of the substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electrical stress within the structure. The protruding wall structure may be partitioned into multiple wall regions disposed along different directions of the substrate to reduce mechanical stress. |
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