TWI827701B

Provided is a method for processing a wafer to prevent quality of a device from deteriorating even when a rear surface of the wafer is processed. According to the present invention, the wafer processing method, which is configured to process a rear surface (10b) of a wafer (10) in which a plurality...

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1. Verfasser: KIUCHI, HAYATO
Format: Patent
Sprache:chi
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Zusammenfassung:Provided is a method for processing a wafer to prevent quality of a device from deteriorating even when a rear surface of the wafer is processed. According to the present invention, the wafer processing method, which is configured to process a rear surface (10b) of a wafer (10) in which a plurality of devices (11) are divided by planned dividing lines (12) and formed on a front surface (10a) of the wafer, includes at least the following steps: a wafer arrangement step of laying any sheet (14) of polyolefin sheet or polyester sheet having a size equal to or larger than the shape of the wafer on the upper surface of a support table (20) having a flat upper surface (22), laying a release layer (16) having a diameter smaller than that of the wafer on the upper surface of the sheet, and positioning the front surface of the wafer on the upper surface of the sheet; a sheet thermo-compression bonding step of heating a sheet by reducing a pressure of a wafer arranged on a support table via a sheet and a release layer