Self-stopping polishing composition and method for high topological selectivity
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer...
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| creator | PALLIKKARA KUTTIATOOR, SUDEEP WANG, JINFENG WILLHOFF, MICHAEL KNAPTON, ELLIOT CHANG, JUYEON NAIK, SAJO |
| description | The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI826878BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI826878BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI826878BB3</originalsourceid><addsrcrecordid>eNqNizEKAjEQANNYiPqH_cA1Cpr65EQrCw8sj5DbXBb2sosbBH-vgg-wmilmlu56Q06NVVGlMoEKk-WvRZlVjCpJgVBGmLFmGSHJAzJNGT6HsEwUA4MhY6z0pPpau0UKbLj5ceXg1PXHc4MqA5qGiAXr0N8vfrv3B9-2uz-SN2efOAc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Self-stopping polishing composition and method for high topological selectivity</title><source>esp@cenet</source><creator>PALLIKKARA KUTTIATOOR, SUDEEP ; WANG, JINFENG ; WILLHOFF, MICHAEL ; KNAPTON, ELLIOT ; CHANG, JUYEON ; NAIK, SAJO</creator><creatorcontrib>PALLIKKARA KUTTIATOOR, SUDEEP ; WANG, JINFENG ; WILLHOFF, MICHAEL ; KNAPTON, ELLIOT ; CHANG, JUYEON ; NAIK, SAJO</creatorcontrib><description>The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.</description><language>chi ; eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231221&DB=EPODOC&CC=TW&NR=I826878B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231221&DB=EPODOC&CC=TW&NR=I826878B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PALLIKKARA KUTTIATOOR, SUDEEP</creatorcontrib><creatorcontrib>WANG, JINFENG</creatorcontrib><creatorcontrib>WILLHOFF, MICHAEL</creatorcontrib><creatorcontrib>KNAPTON, ELLIOT</creatorcontrib><creatorcontrib>CHANG, JUYEON</creatorcontrib><creatorcontrib>NAIK, SAJO</creatorcontrib><title>Self-stopping polishing composition and method for high topological selectivity</title><description>The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEKAjEQANNYiPqH_cA1Cpr65EQrCw8sj5DbXBb2sosbBH-vgg-wmilmlu56Q06NVVGlMoEKk-WvRZlVjCpJgVBGmLFmGSHJAzJNGT6HsEwUA4MhY6z0pPpau0UKbLj5ceXg1PXHc4MqA5qGiAXr0N8vfrv3B9-2uz-SN2efOAc</recordid><startdate>20231221</startdate><enddate>20231221</enddate><creator>PALLIKKARA KUTTIATOOR, SUDEEP</creator><creator>WANG, JINFENG</creator><creator>WILLHOFF, MICHAEL</creator><creator>KNAPTON, ELLIOT</creator><creator>CHANG, JUYEON</creator><creator>NAIK, SAJO</creator><scope>EVB</scope></search><sort><creationdate>20231221</creationdate><title>Self-stopping polishing composition and method for high topological selectivity</title><author>PALLIKKARA KUTTIATOOR, SUDEEP ; WANG, JINFENG ; WILLHOFF, MICHAEL ; KNAPTON, ELLIOT ; CHANG, JUYEON ; NAIK, SAJO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI826878BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>PALLIKKARA KUTTIATOOR, SUDEEP</creatorcontrib><creatorcontrib>WANG, JINFENG</creatorcontrib><creatorcontrib>WILLHOFF, MICHAEL</creatorcontrib><creatorcontrib>KNAPTON, ELLIOT</creatorcontrib><creatorcontrib>CHANG, JUYEON</creatorcontrib><creatorcontrib>NAIK, SAJO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PALLIKKARA KUTTIATOOR, SUDEEP</au><au>WANG, JINFENG</au><au>WILLHOFF, MICHAEL</au><au>KNAPTON, ELLIOT</au><au>CHANG, JUYEON</au><au>NAIK, SAJO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Self-stopping polishing composition and method for high topological selectivity</title><date>2023-12-21</date><risdate>2023</risdate><abstract>The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | Self-stopping polishing composition and method for high topological selectivity |
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