Self-stopping polishing composition and method for high topological selectivity

The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	PALLIKKARA KUTTIATOOR, SUDEEP, WANG, JINFENG, WILLHOFF, MICHAEL, KNAPTON, ELLIOT, CHANG, JUYEON, NAIK, SAJO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.