Semiconductor device

A semiconductor device includes a substrate having an active region, a gate structure on the active region, the gate structure including a gate dielectric layer and a gate electrode layer, and the gate electrode layer having a rounded upper corner, and gate spacer layers on side surfaces of the gate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, JIN WOOK, BAE, DEOK HAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate having an active region, a gate structure on the active region, the gate structure including a gate dielectric layer and a gate electrode layer, and the gate electrode layer having a rounded upper corner, and gate spacer layers on side surfaces of the gate structure, the gate spacer layers having an upper surface at a lower height level than an upper surface of the gate electrode layer.