TWI825974B
This semiconductor apparatus has a substrate film and a semiconductor film formed on the substrate film, wherein the substrate film comprises a polyimide obtained by condensation polymerization of an aromatic diamine and an aromatic tetracarboxylic acid anhydride and has a tensile elasticity in the...
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| Format: | Patent |
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| Zusammenfassung: | This semiconductor apparatus has a substrate film and a semiconductor film formed on the substrate film, wherein the substrate film comprises a polyimide obtained by condensation polymerization of an aromatic diamine and an aromatic tetracarboxylic acid anhydride and has a tensile elasticity in the machine direction of 7 GPa or more, and the semiconductor film is polycrystalline and comprises crystal particles having an average particle size of 1 µm or more. |
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