Wafer non-uniformity tweaking through localized ion enhanced plasma (iep)
semiconductor processing chambers include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned b...
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| creator | KULKARNI, MAYUR GOVIND DHANAKSHIRUR, AKSHAY MUTYALA, MADHU SANTOSH KUMAR PEMMASANI, SAKETH PAUL, KHOKAN CHANDRA |
| description | semiconductor processing chambers include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface and the substrate support may at least partially define a processing region within the chamber. The faceplate may define an inner plurality of apertures. Each of the inner apertures may include a generally cylindrical aperture profile. The faceplate may define an outer plurality of apertures that are positioned radially outward from the inner apertures. Each of the outer apertures may include a conical aperture profile that extends through the second surface. |
| format | Patent |
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The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface and the substrate support may at least partially define a processing region within the chamber. The faceplate may define an inner plurality of apertures. Each of the inner apertures may include a generally cylindrical aperture profile. The faceplate may define an outer plurality of apertures that are positioned radially outward from the inner apertures. 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The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface and the substrate support may at least partially define a processing region within the chamber. The faceplate may define an inner plurality of apertures. Each of the inner apertures may include a generally cylindrical aperture profile. The faceplate may define an outer plurality of apertures that are positioned radially outward from the inner apertures. Each of the outer apertures may include a conical aperture profile that extends through the second surface.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Wafer non-uniformity tweaking through localized ion enhanced plasma (iep) |
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