Warm-up method of physical vapor deposition chamber

The invention provides a method for warming up a physical vapor deposition chamber. A shielding unit is placed between a carrier plate and a target material of the physical vapor deposition chamber, and a process gas is provided to the reaction cavity of the physical vapor deposition chamber. The power supply provides voltage to the target material, so that the process gas forms plasma, and the plasma will be attracted by the voltage on the target material and hit the target material. A voltage measurement unit measures the voltage on the target material to generate a target voltage, where the target voltage includes an initial voltage and a stable voltage. Then, the target voltage and a threshold voltage are compared, and when the stable voltage of the target voltage is greater than the threshold voltage, it is determined that the physical vapor deposition chamber has been warmed up. Through the warm-up method of the present invention, the warm-up time can be saved, and the energy consumed during the warm-up