Process for producing a single crystal of silicon

A process produces a single crystal of silicon. The process includes: installing a feed rod in a float-zone apparatus, having a diameter between 230-270 mm; installing a first hollow cylinder having an internal diameter larger, by 30-50 mm, than the feed rod's diameter; installing a second holl...

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Bibliographische Detailangaben
Hauptverfasser:	RATNIEKS, GUNDARS, SUROVOVS, MAKSIMS, SATTLER, ANDREAS, VIRBULIS, JANIS, HAECKL, WALTER
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A process produces a single crystal of silicon. The process includes: installing a feed rod in a float-zone apparatus, having a diameter between 230-270 mm; installing a first hollow cylinder having an internal diameter larger, by 30-50 mm, than the feed rod's diameter; installing a second hollow cylinder having an internal diameter larger, by not 20-60 mm, than a crystal target diameter that is 290-310 mm; and pulling the single crystal of silicon. A pulling speed is 1.3-1.5 mm/min. A vertical distance of the bottom edge of the first hollow cylinder from the outer melting edge is smaller than 2 mm. The top edge of the second cylinder protrudes 1-10 mm over the crystallizing edge. A length of the single crystal is removed to form an ingot piece having a length 15-50 cm.