TWI817264B

A method for fabricating a vertical light-emitting diode includes: providing a growth substrate, wherein an epitaxial layer is formed on the growth substrate; forming a metal combined substrate on the epitaxial layer, wherein the metal combined substrate comprises two first metal layers and a second...

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Bibliographische Detailangaben

Hauptverfasser:	LIU, AI-SEN, CHEN, XIAO-RU, HUANG, YIUAN, FENG, XIANG-AN
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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