TWI817264B

A method for fabricating a vertical light-emitting diode includes: providing a growth substrate, wherein an epitaxial layer is formed on the growth substrate; forming a metal combined substrate on the epitaxial layer, wherein the metal combined substrate comprises two first metal layers and a second metal layer therebetween, one of the first metal layers is close to the epitaxial layer, and another of the first metal layers is far away from the epitaxial layer; removing the growth substrate; forming a contact metal layer on the epitaxial layer; and removing the second metal layer and the first metal layer far away from the epitaxial layer and leaving the first metal layer close to the epitaxial layer. The vertical light-emitting diode, fabricated by the method, has a thinner thickness, a stronger mechanical strength, a higher light intensity, and a better heat-dissipating effect.