TWI815898B

TWI815898B

There is provided an etching method which includes: providing a substrate inside a chamber, the substrate including a silicon oxide-based material and other material, the silicon oxide-based material including an etching target portion having a width of 10 nm or less and an aspect ratio of 10 or mor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIKUSHIMA, SATORU, LIN, JUN, NAKAGOMI, KEN, OZAWA, YOSHIE, TODA, SATOSHI
Format: Patent
Sprache:chi
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is provided an etching method which includes: providing a substrate inside a chamber, the substrate including a silicon oxide-based material and other material, the silicon oxide-based material including an etching target portion having a width of 10 nm or less and an aspect ratio of 10 or more; and selectively etching the etching target portion with respect to the other material by supplying an HF gas and an OH-containing gas to the substrate.