Real time monitoring with closed loop chucking force control

Embodiments disclosed herein include a method for minimizing chucking forces on a workpiece disposed on a electrostatic chuck within a plasma processing chamber. The method begins by placing a workpiece on an electrostatic chuck in a processing chamber. A plasma is struck within the processing chamb...

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Bibliographische Detailangaben
Hauptverfasser: BOYD, JR, MAKHRATCHEV, KONSTANTIN, PARKHE, VIJAY D, BUSCHE, MATTHEW JAMES, ONO, MASANORI, THACH, SENH
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Embodiments disclosed herein include a method for minimizing chucking forces on a workpiece disposed on a electrostatic chuck within a plasma processing chamber. The method begins by placing a workpiece on an electrostatic chuck in a processing chamber. A plasma is struck within the processing chamber. A deflection force is monitored on the workpiece. A chucking voltage is applied at a minimum value. A backside gas pressure is applied at a minimum pressure. The chucking voltage and or backside gas pressure is adjusted such that the deflection force is less than a threshold value. And the chucking voltage and the backside gas pressure are simultaneously ramped up.