Semiconductor device
A method for manufacturing a semiconductor device includes forming a semiconductor fin over a substrate. A fin spacer is formed on a sidewall of the semiconductor fin. An e-beam treatment is performed on the fin spacer. An epitaxial structure is formed over the semiconductor fin. The epitaxial struc...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A method for manufacturing a semiconductor device includes forming a semiconductor fin over a substrate. A fin spacer is formed on a sidewall of the semiconductor fin. An e-beam treatment is performed on the fin spacer. An epitaxial structure is formed over the semiconductor fin. The epitaxial structure is in contact with the e-beam treated fin spacer. |
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