TWI814880B

To provide an aqueous dispersion for chemical mechanical polishing that can polish a substrate including tungsten and an insulating film at a high speed and can reduce the occurrence of polishing scratches on a surface to be polished.SOLUTION: An aqueous dispersion for chemical mechanical polishing...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	YAMANAKA, TATSUYA, KUNITANI, EIICHIROU, YAMADA, YUUYA
Format:	Patent
Sprache:	chi
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide an aqueous dispersion for chemical mechanical polishing that can polish a substrate including tungsten and an insulating film at a high speed and can reduce the occurrence of polishing scratches on a surface to be polished.SOLUTION: An aqueous dispersion for chemical mechanical polishing according to an embodiment of the present invention includes (A) silica abrasive grains having a group capable of forming a sulfonate on the surface, (B) at least one selected from the group consisting of metal nitrates and metal sulfates, and(C) at least one selected from the group consisting of organic acids and salts thereof, and pH is 1 or more and 6 or less.SELECTED DRAWING: None