Semiconductor device and fabrication method thereof

A semiconductor device includes a substrate, a body region, a source region, a first trench electrode, a first dielectric cap layer, a first dielectric liner and a conductive layer. The body region is disposed on the substrate, and the source region is disposed on the body region. The first trench electrode passes through the source region, the body region and a portion of the substrate. The first dielectric cap layer includes a first dielectric portion directly above the first trench electrode and a plurality of first dielectric spacers on two opposite sides of the first dielectric portion. The first dielectric liner surrounds the first trench electrode and the first dielectric portion. The conductive layer covers the first dielectric cap layer and includes an electrode contact portion. The electrode contact portion includes a first portion disposed in the body region and a second portion adjacent to one of the first dielectric spacers, where the width of the first portion is the same as the width of the sec