TWI813180B

The present invention provides a confinement ring for a plasma processing device. The plasma processing device includes a reaction chamber in which a base used to support a wafer is disposed. The confinement ring is a multi-layered structure, and each layer of the confinement ring includes the confining units which are formed to be a ring structure. The confining units are disposed between the periphery of the base and the side wall of the reaction chamber. Each confining unit includes the arc-shaped members and an extension mechanism. The arc-shaped members are concentric and separately disposed along the radial direction thereof. The extension mechanism is used to drive the arc-shaped members to move along the radial direction of the arc-shaped members, so as to form a gas channel between the adjacent arc-shaped members. The present invention also provides a plasma processing device and a gas pressure controlling method of the plasma processing device. Moreover, the height of the confinement ring is adjusta