Method of manufacturing semiconductor structure and semiconductor process system

Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio b...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, TUNG-KAI, CHEN, KEI-WEI, CHANG, CHIHIEH, LIAO, KAO-FENG, HUANG, HUII, KUNG, CHUN-HAO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.