TWI810417B

The present invention provides a chemical mechanical polishing aqueous dispersion and a chemical mechanical polishing method using the same, wherein the chemical mechanical polishing aqueous dispersion can inhibit corrosion of wiring materials or barrier metal materials while performing high speed p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YAMANAKA, TATSUYA, KUNITANI, EIICHIROU, MIURA, TAKUYA
Format:	Patent
Sprache:	chi
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention provides a chemical mechanical polishing aqueous dispersion and a chemical mechanical polishing method using the same, wherein the chemical mechanical polishing aqueous dispersion can inhibit corrosion of wiring materials or barrier metal materials while performing high speed polishing of a substrate containing metals such as tungsten, tantalum, titanium, and cobalt. The chemical mechanical polishing aqueous dispersion of the present invention is characterized by including: (A) abrasive grains having reactive groups, and (B) a nitrogen-containing heterocyclic compound, and substantially no etchants contained.