Etching method and etching apparatus

A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIN, YU CHI, CHIU, YI WEI, KUO, YU WEI, KE, YU LUN, LIN, CHIN HSING, CHANG, HUNG JUI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.