Manufacturing method of metal compound film

Disclosed is a preparation method for a metal compound film, comprising: step 1: placing into a reaction chamber a tray carrying a wafer onto which a film is to be deposited, the tray being located above a base; and step 2: introducing a first mixed gas of a first inert gas and a process gas into th...

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Bibliographische Detailangaben
Hauptverfasser:	ZHANG, LU, GUO, BING LIANG, ZHOU, LIN, DUAN, JUN XONG, MA, YING GONG, ZHAO, CHEN GUANG, YANG, JIAN, WU, SHU BO, CUI, YA XIN, XU, WEN XUE, SONG, LING YAN, ZHEN, ZI YANG, SHI, SHUAI TAO, ZHAI, HONG TAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed is a preparation method for a metal compound film, comprising: step 1: placing into a reaction chamber a tray carrying a wafer onto which a film is to be deposited, the tray being located above a base; and step 2: introducing a first mixed gas of a first inert gas and a process gas into the reaction chamber, and applying excitation power to a metal target in the reaction chamber, so that the first mixed gas forms a plasma, and the plasma bombards the metal target to form a metal compound film on the wafer; and at the same time, applying radio frequency bias power to the base to adjust the stress of the metal compound film. In step 2 of the present invention, the radio frequency bias power is applied to the base to adjust the stress of the metal compound film when the metal compound film is formed on the wafer. The problem that a film is bent and even falls off under stress is solved, thereby improving the reliability of a device.