Semiconductor structure and manufacturing method thereof

A manufacturing method of a semiconductor structure includes: forming a dielectric layer on an isolation layer; etching the isolation layer and the dielectric layer such that an opening is located in the isolation layer and the dielectric layer, in which an internal sidewall and a bottom of the isolation layer and an internal sidewall of the dielectric layer are exposed from the opening; implanting a plurality of impurities on the internal sidewall and the bottom of the isolation layer and the sidewall of the dielectric layer; and forming a conductive layer in the opening and on the dielectric layer, in which a first growth rate of the conductive layer forming on the isolation layer is different from a second growth rate of the conductive layer forming on the dielectric layer.