IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

A metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. One or more conductive structures directly couple the metal grid to a contact pad. The cond...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAUNG, DUN-NIAN, KAO, MIN-FENG, KUO, WENANG, LIU, JENNG, HUANG, SHIH-HAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. One or more conductive structures directly couple the metal grid to a contact pad. The conductive structures may bypass a front side of the image sensor. A bias voltage on the metal grid may be varied through the contact pad whereby a trade-off between reducing cross-talk and increasing quantum efficiency may be adjusted dynamically in accordance with the application of the image sensor, its environment of use, or its mode of operation.