SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode...

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Hauptverfasser: YAUNG, DUN-NIAN, KAO, MIN-FENG, LIN, HSINGIH, LIU, JENNG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator YAUNG, DUN-NIAN
KAO, MIN-FENG
LIN, HSINGIH
LIU, JENNG
description A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI806143BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI806143BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI806143BB3</originalsourceid><addsrcrecordid>eNrjZJAPdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB34WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8SHhnhYGZoYmxk5OxkQoAQCb3CGf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD</title><source>esp@cenet</source><creator>YAUNG, DUN-NIAN ; KAO, MIN-FENG ; LIN, HSINGIH ; LIU, JENNG</creator><creatorcontrib>YAUNG, DUN-NIAN ; KAO, MIN-FENG ; LIN, HSINGIH ; LIU, JENNG</creatorcontrib><description>A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230621&amp;DB=EPODOC&amp;CC=TW&amp;NR=I806143B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230621&amp;DB=EPODOC&amp;CC=TW&amp;NR=I806143B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAUNG, DUN-NIAN</creatorcontrib><creatorcontrib>KAO, MIN-FENG</creatorcontrib><creatorcontrib>LIN, HSINGIH</creatorcontrib><creatorcontrib>LIU, JENNG</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD</title><description>A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAPdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB34WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8SHhnhYGZoYmxk5OxkQoAQCb3CGf</recordid><startdate>20230621</startdate><enddate>20230621</enddate><creator>YAUNG, DUN-NIAN</creator><creator>KAO, MIN-FENG</creator><creator>LIN, HSINGIH</creator><creator>LIU, JENNG</creator><scope>EVB</scope></search><sort><creationdate>20230621</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD</title><author>YAUNG, DUN-NIAN ; KAO, MIN-FENG ; LIN, HSINGIH ; LIU, JENNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI806143BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAUNG, DUN-NIAN</creatorcontrib><creatorcontrib>KAO, MIN-FENG</creatorcontrib><creatorcontrib>LIN, HSINGIH</creatorcontrib><creatorcontrib>LIU, JENNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAUNG, DUN-NIAN</au><au>KAO, MIN-FENG</au><au>LIN, HSINGIH</au><au>LIU, JENNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD</title><date>2023-06-21</date><risdate>2023</risdate><abstract>A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T20%3A35%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAUNG,%20DUN-NIAN&rft.date=2023-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI806143BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true