SEMICONDUCTOR DEVICE AND METHOD

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAUNG, DUN-NIAN, KAO, MIN-FENG, LIN, HSINGIH, LIU, JENNG
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.