Insulated gate semiconductor device and method for fabricating a region of the insulated gate semiconductor device

The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the tr...

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Bibliographische Detailangaben
1. Verfasser: DENG, SHENGLING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the trenched source contact is covered with an insulation layer and layer of a conductive material on top of the insulation layer, to function as an integrated pseudo Schottky barrier diode in the active power transistor cell.