TWI803774B

Provided is a target which has high magnetic flux leakage, undergoes the generation of a reduced amount of particles during sputtering, and is useful for, for example, the manufacturing of a magnetic recording medium.　A target represented by a compositional formula: Ni100-X-Y-FeX-WY (wherein 5 ≤ X ≤...

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Bibliographische Detailangaben
Hauptverfasser:	FUKUOKA, JUN, FUJIMOTO, MITSUHARU
Format:	Patent
Sprache:	chi
Schlagworte:	ALLOYS CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS PHYSICS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	Provided is a target which has high magnetic flux leakage, undergoes the generation of a reduced amount of particles during sputtering, and is useful for, for example, the manufacturing of a magnetic recording medium.　A target represented by a compositional formula: Ni100-X-Y-FeX-WY (wherein 5 ≤ X ≤ 40, 1 ≤ Y ≤ 15) in terms of atomic ratios, with the remainder made up by unavoidable impurities, wherein a FeW phase is dispersed in a matrix phase comprising NiW. In the target, it is more preferred that there are less than one FeW phase having an inscribed circle diameter of 400 μm or more and less than one W phase having an inscribed circle diameter of 15 μm or more per 0.12 mm2.