METHODS OF FORMING CAPACITOR

The present disclosure provides a method of forming a capacitor including forming a stack on a substrate. The stack includes a support layer, a first material layer on the support layer, and a second material layer above the first material layer, which at least the first material includes ashable material. The method further includes patterning the stack to form a first opening in the stack, forming a first electrode including a second opening in the first opening, removing the second material layer to expose an upper portion of an outer surface of the first electrode, ashing the first material layer to expose a lower portion of the outer surface of the first electrode, and forming a dielectric layer and a second electrode in the second opening and on the outer surface of the first electrode.