Interconnect structure including graphite and method forming same, and integrated circuit structure

A method includes forming a first conductive feature, depositing a graphite layer over the first conductive feature, patterning the graphite layer to form a graphite conductive feature, depositing a dielectric spacer layer on the graphite layer, depositing a first dielectric layer over the dielectri...

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Bibliographische Detailangaben
Hauptverfasser: CHAN, WEI HSIANG, LIN, CHI-FENG, CHANG, CHIH-YI, CHIN, SHUNG, CHI, CHIHIEN, SU, HUNG-WEN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A method includes forming a first conductive feature, depositing a graphite layer over the first conductive feature, patterning the graphite layer to form a graphite conductive feature, depositing a dielectric spacer layer on the graphite layer, depositing a first dielectric layer over the dielectric spacer layer, planarizing the first dielectric layer, forming a second dielectric layer over the first dielectric layer, and forming a second conductive feature in the second dielectric layer. The second conductive feature is over and electrically connected to the graphite conductive feature.