Selective sidewall spacers
Processing methods may be performed to form semiconductor structures that may include spacer materials on dielectric materials. The methods may include depositing a first dielectric material on a silicon element on a semiconductor substrate. The first dielectric material may be selectively deposited...
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| Zusammenfassung: | Processing methods may be performed to form semiconductor structures that may include spacer materials on dielectric materials. The methods may include depositing a first dielectric material on a silicon element on a semiconductor substrate. The first dielectric material may be selectively deposited on the silicon element relative to exposed regions of a second dielectric material. The methods may also include selectively etching the silicon element from the semiconductor substrate. |
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