TWI798187B
A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.
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| Format: | Patent |
| Sprache: | chi |
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| Zusammenfassung: | A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm. |
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