Apparatus for suppressing parasitic plasma in plasma enhanced chemical vapor deposition chamber

Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant cha...

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Hauptverfasser:	PANAVALAPPIL KUMARANKUTTY, HANISH KUMAR, KULKARNI, MAYUR GOVIND, HAMMOND, EDWARD P. IV, ADDEPALLI, SAI SUSMITA, KATAMBLI, SATISH, PRABHAKAR, VINAY K, ROCHA, JUAN CARLOS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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