Apparatus for suppressing parasitic plasma in plasma enhanced chemical vapor deposition chamber

Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant cha...

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Hauptverfasser: PANAVALAPPIL KUMARANKUTTY, HANISH KUMAR, KULKARNI, MAYUR GOVIND, HAMMOND, EDWARD P. IV, ADDEPALLI, SAI SUSMITA, KATAMBLI, SATISH, PRABHAKAR, VINAY K, ROCHA, JUAN CARLOS
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant channel and a return channel of the coolant channel embedded therein. Each of the supply channel and the return channel is a helix in the tubular wall. The helical supply channel and the helical return channel have the same direction of rotation and are parallel to each other. The supply channel and the return channel are interleaved in the tubular wall. With the supply channel and return channel interleaved in the metal shield, the thermal gradient in the metal shield is reduced.