Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single p...

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Bibliographische Detailangaben
Hauptverfasser:	LIN, XING, TOLLE, JOHN, GAO, PEIPEI, WANG, FEI, HILL, ERIC, JOTHEESWARAN, BUBESH BABU, RAMANATHAN, VISH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.