Semiconductor device with self-aligning contact and method for fabricating the same
The present application discloses a method for fabricating a semiconductor device. The method includes forming a fin on a substrate; forming a gate structure on the fin; forming impurity regions on two sides of the fin; forming contacts correspondingly on the impurity regions; and forming conductive...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present application discloses a method for fabricating a semiconductor device. The method includes forming a fin on a substrate; forming a gate structure on the fin; forming impurity regions on two sides of the fin; forming contacts correspondingly on the impurity regions; and forming conductive covering layers correspondingly on the contacts. Forming the contacts includes forming lower portions correspondingly on the impurity regions and below the first dielectric layer; forming middle portions correspondingly on the lower portions; and forming upper portions correspondingly on the middle portions, and protruding from the top surface of the second dielectric layer. |
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