MULTISCALE PHYSICAL ETCH MODELING AND METHODS THEREOF

Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a seco...

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Bibliographische Detailangaben
Hauptverfasser: PARAYIL VENUGOPALAN, SYAM, KAMALI, MOHAMMAD REZA, KUBIS, MICHAEL
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.