Apparatus for cleaning the fluorinated surface inside the ion implanter

The invention proposes three approaches to treat the fluorinated surface, which is a non -negligible issue inside the ion implanter and is more serious when the low energy F containing ion beam is implanted into the carbon surface and/or the silicon surface. First, the H2 gas and/or the ions (atomic and/or molecular) containing H are introduced to the fluorinated surface so that the F bonds are replaced by the H bonds and then these F-containing particles are removed away. Second, the B ion beam, especially the B ion beam with clear recipe, is implanted into the fluorinated surface so that these F-containing particles are removed away. Third, the temperature of the fluorinated surface is adjusted, usually heated, to a temperature region where the F bonds are weakened and these F-containing particles are easily vaporized and then removed away. Optionally, these F-containing particles are pumped away continuously, alternately or flexibly.