High voltage device, high voltage control device and manufacturing methods thereof

A high voltage device includes: a semiconductor layer, a well region, a shallow trench isolation region, a drift oxide region, a body region, a gate, a source, and a drain. The drift oxide region is located on a drift region. The shallow trench isolation region is located below the drift oxide regio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHIU, CHIEN-WEI, CHANG, CHUN-LUNG, HSIUNG, CHIH-WEN, CHIU, KUOIN, YU, KUN-HUANG, WENG, WU-TE, YANG, TA-YUNG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A high voltage device includes: a semiconductor layer, a well region, a shallow trench isolation region, a drift oxide region, a body region, a gate, a source, and a drain. The drift oxide region is located on a drift region. The shallow trench isolation region is located below the drift oxide region. A part of the drift oxide region is located vertically above a part of the shallow trench isolation region and is in contact with the shallow trench isolation region. The shallow trench isolation region is formed between the drain and the body region.