SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND METHOD FOR FABRICATING THE SAME

The present application discloses a semiconductor device with multiple threshold voltages and a method for fabricating the semiconductor device with the multiple threshold voltages. The semiconductor device includes a substrate, a first gate structure positioned in the substrate and having a first d...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	CHOU, YI-HSIEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present application discloses a semiconductor device with multiple threshold voltages and a method for fabricating the semiconductor device with the multiple threshold voltages. The semiconductor device includes a substrate, a first gate structure positioned in the substrate and having a first depth and a first threshold voltage, and a second gate structure positioned in the substrate and having a second depth and a second threshold voltage. The first depth is greater than the second depth, and the first threshold voltage is different from the second threshold voltage.