TWI783640B

A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a wate...

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Bibliographische Detailangaben
Hauptverfasser:	NAMIKI, TAKUMI, HARAGUCHI, TAKAYUKI, SHIH, JEN CHIEH
Format:	Patent
Sprache:	chi
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CINEMATOGRAPHY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FATTY ACIDS THEREFROM HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a water miscible organic solvent, a quaternary ammonium hydroxide, and water. The water miscible organic solvent is a glycol ether based solvent or an aprotic polar solvent having a flash point of 60° C. or greater. The cleaning method includes using the cleaning solution to clean from the semiconductor substrate or the device a residue or film formed on the semiconductor substrate or adhered to the device, the residue or film including at least one of a resist and an inorganic substance that contains silicon atoms.