TWI779322B

A semiconductor storage device according to the present embodiment includes a first semiconductor layer containing impurities. A stacked body is provided above the first semiconductor layer and includes insulating layers and conductive layers that are alternately stacked. A semiconductor body penetrates through the stacked body in a stacking direction to reach the first semiconductor layer and includes a lower region on a side of the first semiconductor layer and an upper region positioned above the lower region. A charge accumulation part is provided between the semiconductor bodies and the conductive layers. An impurity concentration of the lower region of the semiconductor body is higher than that of the first semiconductor layer.