Thin-film transistor and method for manufacturing the same
A method for producing a thin film transistor according to one embodiment of the present invention comprises the formation of an active layer on a substrate. A source region and a drain region are formed such that the regions are able to be electrically connected with the active layer. A first metal...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A method for producing a thin film transistor according to one embodiment of the present invention comprises the formation of an active layer on a substrate. A source region and a drain region are formed such that the regions are able to be electrically connected with the active layer. A first metal oxide layer that is configured from silicon oxide is formed on the surface of the active layer by plasma CVD. A second metal oxide layer that is configured from aluminum oxide is formed on the surface of the first metal oxide layer by ALD. A gate electrode is formed on the surface of the second metal oxide layer. |
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