TWI771781B

TWI771781B

The present invention provides an orthoaxial silicon carbide single crystal growth method, which includes the following steps: (A) screening a silicon carbide material source, and retaining the silicon carbide material source with a size greater than 1 cm and a density of ≥ 3g/cm3; (B) filling the s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KO, CHENG JUNG, KUO, CHIH WEI, HUANG, JUN BIN, ZHAO, YING CONG, CHEN, HSUEH I, TAI, CHIA HUNG
Format: Patent
Sprache:chi
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The present invention provides an orthoaxial silicon carbide single crystal growth method, which includes the following steps: (A) screening a silicon carbide material source, and retaining the silicon carbide material source with a size greater than 1 cm and a density of ≥ 3g/cm3; (B) filling the screened silicon carbide material source into a bottom of a graphite crucible; (C) placing an orthoaxial silicon carbide on top of the graphite crucible as a seed crystal; (D) placing the graphite crucible containing the silicon carbide material source and the seed crystal in an inductive high temperature furnace for performing a physical vapor transport process; (E) performing a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.