PROCESSING METHOD OF WAFER

A processing method for a wafer includes detecting the bow of the wafer, wherein the wafer has a first surface and a second surface opposite to the first surface, wherein the first surface is a concave surface and the second surface is a convex surface; performing a medium-grinding process on the fi...

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Bibliographische Detailangaben
Hauptverfasser:	TSAI, CHIAI, HSU, WENING, LI, IING, WANG, SHANGI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A processing method for a wafer includes detecting the bow of the wafer, wherein the wafer has a first surface and a second surface opposite to the first surface, wherein the first surface is a concave surface and the second surface is a convex surface; performing a medium-grinding process on the first surface and the second surface to obtain a medium-grinded first surface and a medium-grinded second surface; sequentially performing a fine-grinding process to the medium-grinded first surface and the medium-grinded second surface to obtain a fine-grinded first surface and a fine-grinded second surface.