Gas flow control for millisecond anneal system

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape a...

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Bibliographische Detailangaben
Hauptverfasser:	CIBERE, JOSEPH, PFAHLER, CHRISTIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING OPEN SINTERING OR LIKE APPARATUS OVENS RETORTS SEMICONDUCTOR DEVICES WEAPONS
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Beschreibung
Zusammenfassung:	Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.