POLISHING PAD, PREPARATION METHOD THEREOF, AND PREPARATION METHOD OF SEMICONDUCTOR DEVICE USING SAME

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. According to the embodiments, it is possible to provide a polishing pad in which...

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Bibliographische Detailangaben
Hauptverfasser:	HEO, HYEYOUNG, SEO, JANG WON, KIM, KYUNG HWAN, AHN, JAEIN, YUN, SUNGHOON
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL PROCESSES OF COMPOUNDING GRINDING INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS THEIR PREPARATION OR CHEMICAL WORKING-UP TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL WORKING-UP
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Beschreibung
Zusammenfassung:	Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. According to the embodiments, it is possible to provide a polishing pad in which the average diameter of the plurality of pores contained in the polishing pad, the sphericity of the plurality of pores, and the volume ratio thereof are adjusted, thereby enhancing the polishing speed and reducing surface such defects as scratches and chatter marks appearing on the surface of a semiconductor substrate.