Ion implantation system and lens

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion bea...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIKHANSKII, ALEXANDRE, CUCCHETTI, ANTONELLA, SINCLAIR, FRANK, HERMANSON, ERIC D, CHANG, SHENGWU, CAMPBELL, CHRISTOPHER
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.