TWI760531B

TWI760531B

A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of t...

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Bibliographische Detailangaben
Hauptverfasser: OGIWARA, TAKAFUMI, SENOO, TAKEHIKO, SAKAMOTO, TAKESHI, MANABE, TOSHIKI, SHOJO, TADASHI, IZUMI, KOICHI
Format: Patent
Sprache:chi
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.