LASER ENGRAVING METHOD OF SILICON CARBIDE WAFER

The present invention provides a laser engraving method of a silicon carbide wafer, which includes a preparing step, a placing step, and an engraving step. The preparing step is implemented by providing a laser emitter, a carrier, and a transparent silicon carbide wafer that has a first surface and...

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Bibliographische Detailangaben
Hauptverfasser: LO, WEIUN, LIU, CHIEN-YI, CHEN, CHUN-HO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present invention provides a laser engraving method of a silicon carbide wafer, which includes a preparing step, a placing step, and an engraving step. The preparing step is implemented by providing a laser emitter, a carrier, and a transparent silicon carbide wafer that has a first surface and an opposite second surface. The placing step is implemented by placing the second surface of the silicon carbide wafer onto a carrying surface of the carrier that is light non-permeable so as to make the laser emitter to face toward the first surface. The engraving step is implemented by using the laser emitter to emit at least one laser beam toward a predetermined point of the second surface, in which the at least one laser beam is arrived at the predetermined point by passing through the silicon carbide wafer so as to form two laser slots that are respectively recessed in the predetermined point and a sacrificed region of the carrying surface connected to the predetermined point.