Polishing pad, preparation method thereof, and preparation method of semiconductor device using same

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiments, the number average diameter (D...

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Bibliographische Detailangaben
Hauptverfasser:	HEO, HYEYOUNG, SEO, JANG WON, AHN, JAEIN, YUN, JONG WOOK, YUN, SUNGHOON
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL PROCESSES OF COMPOUNDING GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Zusammenfassung:	Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiments, the number average diameter (Da) and number median diameter (Dm) of a plurality of pores are adjusted to achieve a specific range of the Ed value (Equation 1). As a result, an excellent polishing rate and within-wafer non-uniformity can be achieved.